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Package Marking and Ordering Information
Part Number
FDB035N10A
Top Mark
FDB035N10A
Package
D 2 -PAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0 V, T C = 25 o C
100
-
-
V
Δ BV DSS
/ Δ T J
I DSS
I GSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 μ A, Referenced to
V DS = 80 V, V GS = 0 V
V DS = 80 V, T C = 150 o C
V GS = ±20 V, V DS = 0 V
25 o C
-
-
-
-
0.07
-
-
-
-
1
500
±100
V/ o C
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 75 A
V DS = 10 V, I D = 75 A
2.0
-
-
-
3.0
167
4.0
3.5
-
V
m Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Q g(tot)
Q gs
Q gs2
Q gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V DS = 25 V, V GS = 0 V,
f = 1 MHz
V DS = 80 V, I D = 75 A,
V GS = 10 V
(Note 4)
-
-
-
-
-
-
-
5485
2430
210
89
24
8
25
7295
3230
-
116
-
-
-
pF
pF
pF
nC
nC
nC
nC
Switching Characteristics
t d(on)
t r
t d(off)
t f
ESR
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Equivalent Series Resistance (G-S)
V DD = 50 V, I D = 75 A,
V GS = 10 V, R G = 4.7 Ω
f = 1 MHz
(Note 4)
-
-
-
-
-
22
54
37
11
1.2
54
118
84
32
-
ns
ns
ns
ns
Ω
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
214*
856
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 75 A
V GS = 0 V, I SD = 75 A, V DD = 80 V,
dI F /dt = 100 A/ μ s
-
-
-
-
72
129
1.25
-
-
V
ns
nC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. Starting T J = 25 ° C, L = 1 mH, I AS = 36.3 A.
3. I SD ≤ 75 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2011 Fairchild Semiconductor Corporation
FDB035N10A Rev. C2
2
www.fairchildsemi.com
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